Germanium Ge Keywords

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The Bi−Ge (Bismuth-Germanium) system | SpringerLink

Thermodynamic calculations wre made by using the computer program developed by Drs. A.D. Pelton, W.T. Thompson, and C.W. Bale of McGill University Montreal, Quebec. Literature searched through 1983. Professor Abbaschian is the AMS/NBS Data Program Category Editor for binary germanium alloys.GERMANIUM (Ge) | Handbook Series on Semiconductor Parameters,Enter words / phrases / DOI / ISBN / keywords / authors / etc. Search.,Handbook Series on Semiconductor Parameters, pp. 33-57 (1996) No Access. GERMANIUM (Ge) L. E. Vorobyev; L. E. Vorobyev. St. Petersburg State Technical University, Russia. Search for more papers by this authorGermanium powder, −100 mesh, ≥99.999% trace metals basis,,Germanium powder, −100 mesh, ≥99.999% trace metals basis CAS Number 7440-56-4. Empirical Formula (Hill Notation) Ge . Molecular Weight 72.64 . EC Number 231-164-3. MDL number MFCD00085310. PubChem Substance ID 24859656. NACRES NA.23

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Why Silicon is preferred over Germanium ? - Engineering,

But there is a disadvantage for Silicon over Germanium. The potential Barrier of Silicon is more compared to Germanium. But if we consider the advantages listed above, we can conclude that Silicon is the best element for the Semiconductor Devices and Applications. However, the first transistor was made of germanium (Ge). 🙂Germanium (Ge) | SpringerLink,Germanium (Ge) is a gray-white metalloid, and in its pure state is crystalline and brittle, retaining its luster in air at room temperature. Zone-refining technique has led toGermanium: Current and Novel Recovery Processes | IntechOpen,Germanium (Ge) is considered a critical element due to its many industrial applications; Ge is a metalloid used in solar cells, fiber optics, metallurgy, chemotherapy, and polymerization catalysis. The main sources of Ge are sulfides ores of Zn, Pb, and Cu, coal deposits, as well as by-products and residues from the processing of these ores and coals (e.g., smelting flue dust and coal fly,

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Silicon (Si) and germanium (Ge) in optical devices,

T1 - Silicon (Si) and germanium (Ge) in optical devices. AU - Ohashi, Keishi. PY - 2011/2. Y1 - 2011/2. N2 - This chapter describes optical devices which use Si, SiGe, and Ge technologies for electronics. It starts with the optical waveguides and optical resonators which create slowGermanium chips, 99.999% trace metals basis | Sigma-Aldrich,Germanium chips, 99.999% trace metals basis CAS Number 7440-56-4. Empirical Formula (Hill Notation) Ge . Molecular Weight 72.64 . EC Number 231-164-3. MDL number MFCD00085310. PubChem Substance ID 24855958. NACRES NA.23Effect of Hydrogen Annealing on Contact Resistance,,1/6/2016· The effect of post-deposition H 2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP).

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Refractive index measurements of Ge | NIST

This is an improvement by about an order of magnitude of the uncertainty level for index data of germanium generally used for optic design. A Sellmeier formula fitting our data for this range is provided. An analysis of the uncertainty is presented in detail. These measurements are compared to previous measurements of Ge.Effect of Hydrogen Annealing on Contact Resistance,,The effect of post-deposition H 2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP).Implantation and diffusion of phosphorous in germanium,,In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5×10 13 and 10 15 cm −2) and a range of energies (30, 50 and 150 keV).Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2) and an 80 nm silicon nitride (Si 3 N 4) capping layer while the rest remained uncovered.

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Optimization of germanium (Ge) n+/p and p+/n junction,

Optimization of germanium (Ge) n + /p and p + /n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration. Jin Hong Park, Duygu Kuzum, Hyun-Yong Yu, Krishna C. Saraswat. Research output: Contribution to journal › Article. 6 Citations (Scopus) Abstract.NIST - SRM Order Request System SRM 3120a - Germanium (Ge,,SRM 3120a - Germanium (Ge) Standard Solution Ge, Germanium, spectrometry, single element solutions, pure materials, cations, metals,7440-56-4 - Certificate - MSDS - Table - Data Files Add Material to Cart CertificateEvaluation of the Effects of Dietary Organic Germanium, Ge,,20/4/2012· Poly-trans-[(2-carboxyethyl) germasesquioxane] (Ge-132) is the most common organic germanium compound.The ingestion of Ge-132 promotes bile secretion. We assessed the rat caecal characteristics after the administration of Ge-132 and raffinose, a prebiotic oligosaccharide, because both Ge-132 and some prebiotics can change the fecal color to yellow.

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(PDF) Germanium: Current and Novel Recovery Processes

Keywords: germanium, residues, by-products, hydrometallurgical processes. 1. Introduction. Germanium (Ge) w as discovered in Freiberg in 1885. One year later, it was isolated from .US10504771B2 - Semiconductor device including strained,,Prior art keywords layer germanium ge sacrificial layer semiconductor device Prior art date 2016-09-13 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US15/416,727 Other versionsGermanium Wafers: July 2016,Here we report the observation of germanium oxide microcrystals formed on the surface of tellurium implanted into a germanium substrate. The Ge target used was a (1 0 0) polished single crystalline germanium wafer and the implantation was carried out at room temperature with Te ions at 180 keV and a fluence of 3.6 × 10 15 at/cm 2.

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Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar,

We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge byGermanium nitride and oxynitride films for surface,,Keywords: Germanium nitride layer Germanium oxynitride layer Room temperature deposition Electrical resistivity Surface passivation Hyperpure germanium detector a b s t r a c t This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors.US20080017101A1 - Germanium Deposition - Google Patents,A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium.

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Epitaxial germanium on soi substrate and its application,

Integrating germanium (Ge) thin film on silicon-on-insulator (SOI) substrate and fabricating Ge fin field-effect transistors (FinFETs) are demonstrated in this paper. Directly grown Ge film on a high-resistivity thin SOI substrate provides a good platform for fabricating advanced Ge devices.Advances in Effect of Germanium or Germanium Compounds on,,Germanium (Ge) was first discovered and named by the German chemist Winkler in 1886, and then it has been found and detected as a trace element from the plants and animals. After 1960s, the biological function of germanium and mechanism of interaction with body have become the hot topics inImpact of a germanium and carbon preamorphization implant,,This letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts.

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Organic Germanium (Ge-132) - Supplements - LONGECITY

Organic Germanium (Ge-132) Started by IgG ,,Date: 01/09/02 Keywords: Minerals, Your body contains several 'trace minerals'which, despite being present in minute quantities as their name suggests, are indispensable not only for good health but also for your very existence.REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation,,Controlling germanium interfaces will be essential for this purpose. We review germanium surface reactivity, beginning with a description of the most commonly used surfaces, Ge(100) and Ge(111). An analysis of oxide formation shows why the poor oxide properties have hindered practical use of germanium to date.Germanium - definition of germanium by The Free Dictionary,Define germanium. germanium synonyms,,English dictionary definition of germanium. n. Symbol Ge A brittle, crystalline, gray-white metalloid element, widely used as a semiconductor, as an alloying agent and catalyst,,Keywords: Silicon; Germanium; Quantum

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Germanium gamma-ray spectrometer on selene (kaguya,

title = "Germanium gamma-ray spectrometer on selene (kaguya)", abstract = "The Japanese lunar explorer SELENE was launched from Tanegashima Space Center on September 14, 2007. It consists of a main orbiter KAGUYA at 100 km altitude and two daughter satellites (relay satellite OKINA and VRAD satellite OUNA) with 14 scientific instruments.Recovery of Germanium from Coal Fly Ash Leachate by,,KEYWORDS: germanium, fly ash, leachate, catechol, cetyl trimethyl ammonium bromide, response surface methodology, optimization . ABSTRACT . The valoriz ation of coal gasification fly ash is studied by leaching the fly ash with water and a subsequent precipitation of trace amounts of germaniumDirect Synthesis of Hyperdoped Germanium Nanowires,KEYWORDS: germanium, nanowires, hyperdoping, gallium, quasi-metallic, semiconductor A nisotropic Ge nanostructures have been used as active components for different applications including field effect transistors,1 lithium ion batteries,2 solar cells,3 and humidity sensors.4 Ge

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